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Contract development and processing services

We accept contract development and processing to reach the shape and surface accuracy suitable for your request.
For example, surface and edge processing of various works.

Contract development and processing services
Features

  • We will respond to your needs.
    ex) Small lot trial production to mass production, supply of consumables, polishing equipment, process, technology, etc.
  • Specialized process technology development staff is available from development
  • We have extensive evaluation equipment, so we can check and evaluate quality before and after processing.
  • Mirror finishing of difficult-to-cut materials such as titanium and SiC is also available.

Processing target

Material Processing target Processing content Corresponding size
  • Various semiconductor substrates(Si, SiC, GaN, GaAs, sapphire, LiTaO3,(LiNbO3, SiN, AlN, SiN, various composite materials, etc.)
  • Solar cell substrate
  • Various metal substrates(Cu, Al, SUS, Ti, Au, Ag, W, etc.)
  • Various glass substrates(Quartz, Pyrex glass, tempered glass,Soda glass, etc.)
  • Various resin substrates
  • Edge
    (Bevel Notch Orifla)
  • Beveling
  • trimming
  • Polishing
Φ2 inch to 300 mm
  • Front and back
  • Wrap
  • Polishing
~ 4 inches ~ □ 300 mm
  • Various cylindrical materials (Al, SUS, various alloys, rubber,Resin material, DLC film, Cr film, etc.)
  • surface
  • Wrap
  • Polishing
Diameter ~ 150mm,Length ~ 450mm
  • Various hoop materials (roll to roll)
  • surface/li>
  • Wrap
  • Polishing
Separate consultation
  • Measurement / analysis / analysis of various workpieces
  • Surface / edge
  • Measurement

Processing example

SiN substrate Sintered SiC substrate
Before processing After processing Before processing After processing
Ra=1156.7Å Ra=4.0Å Ra=1242.9Å Ra=3.9Å
Alumina substrate AlN substrate
Before processing After processing Before processing After processing
Ra=7.7Å Ra=3.2Å Ra=128.5Å Ra=18.6Å
Single crystal SiC substrate Cu film surface polishing
Before processing After processing Before processing After processing
Ra=41.4Å Ra=2.4Å Ra=106.9Å Ra=16.7Å
GaN substrate chamfering Chamfering of glass substrate
Before processing After processing Before processing After processing
Crystal abnormal Si wafer chamfering Chamfering of SiC wafer
Before processing After processing Before processing After processing