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Contract development and processing services
We accept contract development and processing to reach the shape and surface accuracy suitable for your request.
For example, surface and edge processing of various works.
Features
- We will respond to your needs.
ex) Small lot trial production to mass production, supply of consumables, polishing equipment, process, technology, etc. - Specialized process technology development staff is available from development
- We have extensive evaluation equipment, so we can check and evaluate quality before and after processing.
- Mirror finishing of difficult-to-cut materials such as titanium and SiC is also available.
Processing target
Material | Processing target | Processing content | Corresponding size |
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Φ2 inch to 300 mm |
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~ 4 inches ~ □ 300 mm | |
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Diameter ~ 150mm,Length ~ 450mm |
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Separate consultation |
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Processing example
SiN substrate | Sintered SiC substrate | ||
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Before processing | After processing | Before processing | After processing |
Ra=1156.7Å | Ra=4.0Å | Ra=1242.9Å | Ra=3.9Å |
Alumina substrate | AlN substrate | ||
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Before processing | After processing | Before processing | After processing |
Ra=7.7Å | Ra=3.2Å | Ra=128.5Å | Ra=18.6Å |
Single crystal SiC substrate | Cu film surface polishing | ||
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Before processing | After processing | Before processing | After processing |
Ra=41.4Å | Ra=2.4Å | Ra=106.9Å | Ra=16.7Å |
GaN substrate chamfering | Chamfering of glass substrate | ||
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Before processing | After processing | Before processing | After processing |
Crystal abnormal Si wafer chamfering | Chamfering of SiC wafer | ||
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Before processing | After processing | Before processing | After processing |